Abstract
We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near the metal contact of the IGBT emitter, to better describe the dynamic characteristics of the transistor. A simplified model of the metal–oxide-semiconductor field-effect transistor (MOSFET) in the IGBT is used to simplify this IGBT model. The second simpler behavioral model could be used to model both IGBTs and MOSFETs. Model parameters are obtained from datasheets and then adjusted using results from a single measurement test. Modeling results are compared with measured turn-on and turn-off waveforms for different types of IGBTs. To check the validation of the models, a brushless DC electric motor test setup with an inverter was created. Despite the simplicity of the presented models, a comparison of model predictions with hardware measurements revealed that the model accurately forecasted switch transients and aided EMI–EMC investigations.
Highlights
Power transistors are the main source of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) problems in power devices
We focus on insulated-gate bipolar transistor (IGBT) models consisting of metal–oxide-semiconductor field-effect transistor (MOSFET) and PNP transistors
In reviewing the simpler models, which mainly use the behavioral modeling principle based on semiconductor devices physics [11,12,13,14,15,16,17,18,19], we found that the most of these models are optimized for certain situations
Summary
Power transistors are the main source of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) problems in power devices. Factory SPICE models are mainly based on the above method Due to their complex modeling systems, when several models of transistors are required simultaneously, the modeling time increases when factory models are used, which can lead to frequent convergence problems [10,14]. We present a methodology for the generation and usage of EMI–EMC applications in two variants of power transistor models optimized for simulations of power devices:. A novelty of this model is the addition of nonlinear, current-dependent resistance near the emitter, which increases the accuracy of the model in static and dynamic modes The creation of this model requires complicated procedures. The second model is a behavioral model requiring only seven parameters for proper operation These parameters are obtained from the transistor datasheet.
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