Abstract
By way of periphery circuit design of the phase-change memory, it is necessary to present an accurate compact model of a phase-change memory cell for the circuit simulation. Compared with the present model, the model presented in this work includes an analytical conductivity model, which is deduced by means of the carrier transport theory instead of the fitting model based on the measurement. In addition, this model includes an analytical temperature model based on the 1D heat-transfer equation and the phase-transition dynamic model based on the JMA equation to simulate the phase-change process. The above models for phase-change memory are integrated by using Verilog-A language, and results show that this model is able to simulate the I–V characteristics and the programming characteristics accurately.
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