Abstract
A new type of solid-state thin-film white light-emitting device has been reviewed and discussed. Light is emitted due to thermal excitation of the nano-sized conductive paths formed after the dielectric breakdown of the amorphous metal oxide thin film deposited on a silicon wafer. The mechanism of light emission, optical characteristics, reliability, driving methods, and efficiency are discussed. The complete device is made of the IC-compatible materials and process.
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