Abstract
ABSTRACTCompounds of the type M(S2CNRR’)2, M = Ni(II), Pd(II), RR' = Et2, MeEt and MenBu, have been synthesized and used as single-source precursors for the fabrication of NiS and PdS thin films via low-pressure (LP) metal-organic chemical vapour deposition (MOCVD). The phase of nickel sulfide films deposited on glass substrates was found to be NiS1.03 or a mixture of NiS1.03 and NiS, whilst palladium sulfide films were only tetragonal PdS. The films have been characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM), transition electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX).
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