Abstract
Using a combined SIMS-XPS system it is shown that the much lower secondary ion yield of Ge + sputtered from germanium under 10 keV O + 2 bombardment at normal incidence compared to the Si + yield sputtered from silicon is due to the much smaller uptake of oxygen in germanium vs silicon. Data are also presented on the chemistry induced in b oth elements as a function of the angle of incidence of the O + 2 beam.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
