Abstract
A simple technique allowing the determination of the interface trap distribution induced by hot carrier injection in MOS capacitors is presented. It is based on a comparison between capacitance–voltage ( C– V g) measurements before and after stress. The procedure can be applied even if the doping profile is very abrupt and the stress-induced leakage current very high. In addition, quantum mechanical effects are properly taken into account. Measurements are performed using p-MOS capacitors. Interface state generation after Fowler–Nordheim electron injection is studied.
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