Abstract
A dual-path multi-band power amplifier (PA) with a tunable output matching network is presented for long-term- evolution (LTE) handset applications. To optimize output load impedances for various power regions with various frequency bands, an impedance tuner implemented using lumped elements is used. The dual-path multi-band PA fabricated using $0.35{\mathchar702D}\mu{\rm m}$ SiGe BiCMOS process is evaluated for the evolved UMTS terrestrial radio access (E-UTRA) bands 1, 2, 3, 5, and 8 with a 10 MHz bandwidth (BW) LTE 16 quadrature amplitude modulation signal having a peak-to-average ratio of 6.4 dB.
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