Abstract
A new serial access scheme for memristor-CMOS hybrid memory cell is proposed, which addresses the limitations of sneak-path current, crosstalk and cell-cell interference. The serial access circuit consists of only one multiplexer and one I/O circuit, implementing memory addressing for memristor memory crossbar array. Memristor is used to store the bit information, and CMOS is used to isolate, control, decode and interoperate the logic. The proposed design is verified with PSPICE simulation utilizing a modified memristor model. Compared with conventional circuitry in parallel access scheme, the dedicated designed serial I/O circuitry for memristor-CMOS hybrid memory is simpler and area saving. The new serial access scheme, juxtaposed with conventional parallel access scheme, can get better performance in some area critical and ultra high frequency memory applications.
Highlights
A Serial Access Scheme Design on Memristor-CMOS Hybrid MemoryYANWEN GUO 1, XIAOPING WANG 1, (Senior Member, IEEE), QINGHUI HONG 2, AND YANG ZHANG 3
With digital electronics developing so fast these years, memory with smaller area occupation becomes more attractive in current integrated circuits and systems
A serial access scheme on memristor based memory is proposed in this paper
Summary
YANWEN GUO 1, XIAOPING WANG 1, (Senior Member, IEEE), QINGHUI HONG 2, AND YANG ZHANG 3.
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