Abstract
Abstract The relaxation models developed previously 1,2 for steady state problems are extended to consider time dependent transport in inhomogeneous silicon structures. For steady state transport in camel diodes, the relaxation models give excellent agreement with Monte-Carlo simulations. The time dependent treatment indicates that an adiabatic approximation should be adequate up to ∼ 10 11 Hz., when reactive hot component of current and charge from ∼ 10% corrections in silicon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica B+C
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
