Abstract
A semi-theoretical relationship is presented between the breakdown voltage of the field plate edge and the field plate design in terms of the finite length and the thickness for a planar P–N junction in this brief for the first time. As the effect of the oxide thickness of the field plate on the breakdown voltage is similar to the junction radius of the planar P–N junction, the effect of the field plate length is just similar to the lateral radius of the planar junction. From this analysis, a simple closed form solution suitable for calculating the breakdown voltage of the field plate edge has been obtained and the theoretical prediction is well verified by the previous experimental data and our numerical simulation results.
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