Abstract
AbstractNarrow bandgap 2D layered material platinum selenide (PtSe2) with good environmental stability, high carrier mobility, and high light absorption, has been widely investigated for uncooled midwave‐infrared (MWIR) photodetection. However, the phototransistor based on the PtSe2 operation at room temperature suffered from the high dark current and background noise. Here, a graphene (G)‐enhanced G‐WSe2/PtSe2 hetero‐diode placed on a metal electrode is reported. To enhance the photogain, a graphene layer placed on the WSe2/PtSe2 heterodiode as a local gating layer is designed. The device exhibits an ultra‐high light on/off ratio of up to 108 and ultra‐fast photoresponse speed with raising time τr = 0.9 µs and decay time of τd = 1.5 µs in the visible spectra range. Notably, ultrabroad band photoresponse from 405 to 3366 nm is demonstrated under the self‐power model. Notably, the device presented a competitive photovoltaic effect with a high energy conversion efficiency (PCE) of 3.45%. The results pave the way toward a new approach to tuning the performance of the atomic thin layered materials photodetector.
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