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Abstract
Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of Ion/Ioff current ratio, transconductance, subthreshold slope, threshold voltage roll-off, and drain induced barrier lowering (DIBL). In addition, the scaling behavior of electronic figures of merit is comprehensively studied with the aid of physical simulations. The electrical characteristic of proposed structure is compared with a circular GAA-FET, which is previously calibrated with an IBM sample at the 22 nm channel length using 3D-TCAD simulations. Our simulation results show that sectorial cross section GAA-FET is a superior structure for controlling short channel effects (SCEs) and to obtain better performance compared to conventional circular cross section counterpart.
Highlights
To improve the device performance, reliability against short channel effects (SCEs) and scalability, several structures and materials have been proposed during last decades
gate-all-around field effect transistor (GAA-Field Effect Transistor (FET)) are of promising structures for deep scaling compared to Fin-FETs, Omega-FETs, double gate-MOSFETs, and single gate MOSFETs, weak subthreshold characteristic is among serious concerns regarding to these devices which limits their applications in low power and steep switching circuits [45]
In this work we propose a scheme of sectorial cross section gate-all-around field effect transistor (Sec-GAAFET) and consider its electrical characteristics against SCEs by scaling the channel length
Summary
To improve the device performance, reliability against SCEs and scalability, several structures and materials have been proposed during last decades. It has been shown that the electrical characteristics of a single gate Field Effect Transistor (FET) can be improved by applying device engineering methods in the gate [1,2], active region [3,4,5,6], and buried oxide [7,8,9] or switching to other structures like double gate MOSFET [10,11,12], Fin-FET [13,14,15], nanowire FET [16,17], and gate-all-around (GAA) FET structures [18,19,20,21], due to increase of the gate electrostatic control over the channel. In this work we propose a scheme of sectorial cross section gate-all-around field effect transistor (Sec-GAAFET) and consider its electrical characteristics against SCEs by scaling the channel length.
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