Abstract
A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry technique is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.
Highlights
Recent technological progress has resulted in the reduction of the dimensions of electronic and magnetic devices to the nanoscale
To illustrate the potentiometry technique by using an scanning tunneling microscope (STM), 5 nm-thick tungsten films on sapphire substrates have been fabricated by using DC magnetron sputtering and analyzed insitu under ultra-high vacuum conditions
The measurement starts by parking the STM tip at the desired (x, y)location
Summary
Recent technological progress has resulted in the reduction of the dimensions of electronic and magnetic devices to the nanoscale. Surface potentials measured at different (x, y)-locations on the tungsten thin film at a constant bias current reveal the resistivity of the tungsten film.
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