A Robust Threshold Method of Mixed Layer Height Based on Lidar Turbulence Data Under Different Thermal Convection Conditions

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A Robust Threshold Method of Mixed Layer Height Based on Lidar Turbulence Data Under Different Thermal Convection Conditions

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A Method for Estimating the Turbulent Kinetic Energy Dissipation Rate from a Vertically Pointing Doppler Lidar, and Independent Evaluation from Balloon-Borne In Situ Measurements
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Mixing height determination by ceilometer
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Boundary Layer Height and Entrainment Zone Thickness Measured by Lidars and Wind-Profiling Radars
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Generation of an Eddy Dissipation Rate Map at the Hong Kong International Airport Based on Doppler Lidar Data
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Windshear Detection in Rain Using a 30 km Radius Coherent Doppler Wind Lidar at Mega Airport in Plateau
  • Mar 6, 2024
  • Remote Sensing
  • Haiyun Xia + 6 more

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Remote sensing of the tropical rain forest boundary layer using pulsed Doppler lidar
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Measurements of wind velocity and direction with coherent Doppler lidar in conditions of a weak echo signal
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Measurement report: The promotion of the low-level jet and thermal effects on the development of the deep convective boundary layer at the southern edge of the Taklimakan Desert
  • Sep 27, 2024
  • Atmospheric Chemistry and Physics
  • Lian Su + 5 more

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A Review of Techniques for Diagnosing the Atmospheric Boundary Layer Height (ABLH) Using Aerosol Lidar Data
  • Jul 4, 2019
  • Remote Sensing
  • Ruijun Dang + 4 more

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Quantitative microsegregation analysis was carried out on Sb‐doped silicon crystal pulled from the melt. Interference by thermal convection in the melt, invariably present in silicon growth at commonly used rates of pulling and seed rotation, was eliminated by introducing severe thermal asymmetry in the growth system. Interface demarcation was employed for the determination of the microscopic growth rates and spreading resistance measurements for obtaining composition profiles. For growth under forced convection conditions it was shown that the microsegregation behavior is controlled by the microscopic growth rate and is adequately accounted for by the Burton, Prim, and Slichter (BPS) model based on steady‐state segregation. The small deviations from steady‐state segregation were manifested as solute redistribution transients associated with the periodic growth rate variations (slight phase shift between dopant concentration and microscopic growth rate). For growth under thermal convection conditions, the microscopic growth rate is modulated by convective temperature fluctuations in the melt, but it does not control the microsegregation behavior because under these conditions the diffusion boundary layer thickness undergoes significant fluctuations. Accordingly, the BPS model, which assumes a constant diffusion boundary layer thickness, was found to be inapplicable to microsegregation in silicon grown under thermal convection.

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