A robust, low power and high speed radiation hardened 12T SRAM cell for space applications

Abstract

High-energy particles found in space environment can cause single event upsets (SEUs). The severe environments found in space are too harsh for conventional 6T static random-access memory (SRAM) cell as its data get altered when a radiation particle strikes a susceptible place of the cell. Therefore, creating an SRAM that can withstand these demanding space circumstances is essential. This paper proposes a High Speed Radiation Hardened 12T (HSRH12T) SRAM cell which is suitable for low power applications and mitigates the effect of both SEU and multi-bit soft errors. All of the HSRH12T sensitive nodes are capable of recovering their data, even in the event that a radiation impact flips the node values. The HSRH12T demonstrates up to 1.6×/7.88×/1.31×/23.37× reduction in read delay (TRA), write delay (TWA), leakage and dynamic power consumption, respectively. The proposed cell exhibits up to 1.64× greater critical charge compared to the other considered cells.