Abstract
Abstract With the development of semiconductor technology, traditional flip-chip bonding has been difficult to meet the high-density, high-reliability requirements of advanced packaging technology. As an advanced three-dimensional stacked packaging technology, Cu-SiO2 hybrid bonding technology can achieve high-density electrical interconnection without bumps, which expands the transmission performance and interconnection density of chips greatly. However, the investigation on Cu-SiO2 bonding is far from mature, and many researchers are studying Cu-SiO2 bonding passionately. There are many technologies that use different bonding mechanisms to achieve Cu-SiO2 bonding, which will affect the bonding strength directly. We review the mechanism and research progress of Cu-Cu bonding, SiO2-SiO2 bonding. What is more, we summarize the comparison of bonding conditions and bonding strength of various methods furtherly. According to the bonding mechanism, we propose some economical solutions for low-temperature Cu-SiO2 hybrid bonding, with the aim of providing certain references for the further development of advanced semiconductor packaging.
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