A resonant power MOSFET/IGBT gate driver

Abstract

This paper discusses a resonant gate driver that employs a new method of driving a power MOSFET or IGBT. This resonant gate driver recycles the energy stored in the gate capacitance to reduce the CV/sup 2/f losses associated with a conventional gate driver. Reducing the CV/sup 2/f losses reduces the power consumption and hence the subsequent power dissipation in the resonant gate driver. Less power dissipation enables the driver to operate to higher frequencies. In addition, this topology allows the resonant gate driver to drive the MOSFET gate with a much higher peak to peak voltage swing than it is supplied with and to drive the gate negative in its off cycle. The resonant gate driver can drive the gate with a variable frequency and duty cycle, and very fast switching of the power MOSFET is obtained. An introduction into the low loss capacitance driver circuit topology (patent pending) is presented. The design considerations of implementing a practical MOSFET gate driver using this topology are discussed. Practical implications and considerations of using this topology to drive power MOSFETs/IGBTs are briefly put forward. Experimental test circuits and results are then presented.