Abstract
Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for the degradation of power converter efficiency due to modulation of the effective dynamic ON-resistance (RON) with respect to its static value. Dynamic RON degradation is typically dependent on the blocking voltage and the commutation frequency and is particularly significant in new technologies under development. The possibility to characterize this phenomenon on GaN switch samples directly on-wafer, under controlled operating conditions that resemble real operations of the DUT in a switching mode power converter is extremely valuable in the development phase of new technologies or for quality verification of production wafers. In this paper, we describe a setup that allows this characterization: dynamic RON degradation of on-wafer 600 V GaN switches is characterized as a function of the VDS blocking voltage, the VGS driving voltage, and at different temperatures. The dependency on the switching frequency is identified by measuring the current recovery of the switch after the application of blocking voltages of different durations.
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