A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

Abstract

An approach to optoelectronic integration utilizing a universal heterostructure with a single GaAs quantum-well active region is presented. The inversion channel forms the basis of a heterojunction field-effect transistor, a lateral current injection laser, a field-effect modulator, and a waveguide photodetector by simple reconfiguration of the electrodes and device geometry. The fabrication technology has been developed for gigahertz bandwidth applications by utilizing ion implantation techniques for interdevice electrical isolation and surface planarization, and reactive ion-etching to realize a self-aligned transistor-based heterostructure. The design, fabrication, and characterization of various heterostructures are discussed in the context of optoelectronic integration and the implementation of ion implantation disordering to realize low-loss self-aligned waveguides for on chip signal routing. The ultimate performance of the devices using a GaAs quantum well is considered, as well as the development of this technology for improved performance using strained InGaAs wells.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>