Abstract
A model is proposed for the epitaxial growth of silicon in a vertical reactor where the reactant gas flows parallel to silicon wafers. It is assumed that the growth rate of deposited silicon is mass‐transport controlled, and the equilibrium reaction is . The model considers the profiles of the gas velocity and the temperature of the reactant gas, and also a decrease of the concentration along the gas flow. The growth rates at various positions along the susceptor are calculated under the conditions of substrate temperatures 1100°–1300°C, wall temperatures 300°–850°C, reactant gas flow rates 40–120 liters/min, and concentrations of 0.004–0.008 in mole ratio. The growth rate is expressed as a function of the dimensions of the reaction chamber, and susceptor and of process variables such as the concentration, the gas flow rate, and the temperature. Using the function, the sensitivity analysis of process variables to the growth rate is investigated. Good agreement between the theory and the experimental result of the growth rate is obtained.
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