Abstract
This paper presents a new pixel architecture for an infrared sensor array based on a pyroelectric polymer integrated with a CMOS charge amplifier. The fill factor of the sensor is optimised by placing the amplifier structure directly below the sensing area. The maximum responsivity is 1000 V/W @ 1 Hz and the specific detectivity is 6.84×10 6 cm √Hz/W @ 100 Hz. These results are presented in comparison with those of a single MOSFET with an external 10 9 Ω bias resistor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
