Abstract
The time-stability of the electrical characteristics of chalcogenide materials is one of the most important issues for their use in nonvolatile solid state memory applications. In particular the electrical conduction of the glassy phase evolves with time due to two different physical phenomena: the crystallization and the so-called low conductivity drift. Despite the physics of crystallization having been extensively studied in literature, the latter is mainly described by phenomenological relationships, and its physical comprehension is still under discussion. In this paper we study the amorphous phase low-field conductivity drift and its dependence on the temperature experienced by the device. We developed an experimental procedure able to separate the reversible change in the electrical conductivity with temperature due to the material semiconductorlike behavior from the nonreversible one related to the drift mechanism. A drift model explaining such nonreversible conductivity change as a band diagram modification is also provided and calibrated on experimental data. The present work finally introduces alternative metrics for drift quantification that can be useful in order to compare different materials.
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