Abstract
The results of a 2-dimensional numerical analysis of medium and high-voltage diode structures that incorporate a ‘resurf’ field reduction layer are presented. The work illustrates the effect of surface charge on the optimisation of the design and indicates the requirements that will ensure bulk breakdown for a wide range of surface charge densities. The results are used to assess the analytical design equation presented by Appels et al., modified to take account of surface charge. A comparison is also made with results obtained from an analysis of the field limiting ring technique, and the relative performance of the two methods is assessed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEE Proceedings I Solid State and Electron Devices
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
