Abstract

In this paper a new uncooled thermal imaging sensor using MEMS transistor with movable gate is presented. The novelty of this work is making moveable polysilicon gate by two minder bi-materials arms on silicon substrate using MEMS technology. The arms are deflected with absorbed infrared temperature from objects, and move the gate plate. By changing air gap between gate and Si channel, the drain current of transistor will be changed. The geometrical parameters are obtained using analysis of the structure. A FEM simulation was performed using COMSOL Multiphysics software to verify the validity. This structure has many advantages; including compatibility with CMOS fabrication process, high sensitivity, low power consumption, no need signal amplification, ability to miniaturization of pixel size, much more than other techniques that used until now.

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