Abstract
A novel synthesis of Zn 2SiO 4:Mn thin film was carried out. The Zn 2SiO 4 thin film on ZnO disk obtained by sintering ZnO disk deposited with SiO by the use of vapor deposition method. Furthermore Zn 2SiO 4 thin film doped with Mn 2+ or Eu 3+ ion was obtained by sintering the Zn 2SiO 4/ZnO disk applied with the Mn 2+ or Eu 3+ nitrate solutions. The Zn 2SiO 4:Mn and Zn 2SiO 4:Eu thin film modified on ZnO semiconductor electrode indicated electrochemical luminescence (ECL) based on the dopants under anodic polarization at about +12.6 V. The ECL would be attributed to selective excitation of emission centers by avalanche breakdown.
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