Abstract
In this paper, a novel silicon-controlled rectifier (SCR) structure is proposed to protect a radio-frequency (RF) power amplifier (PA) from electrostatic-discharge (ESD) damages. With a distinguished feature of an imbedded Deep N-well (DNW) area beneath the P-well/N-well regions, the novel SCR is demonstrated to be superior to the conventional SCR in terms of relatively low trigger voltage (13.3V) and high holding voltage (7 V). The new device can be realized in SMIC 0.18μm RF technology without requiring extra layout area. The operational mechanism of the new device structure is investigated, and the effect of the additional DNW region on the SCR's I-V characteristics is analyzed by TCAD simulation.
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