A Novel Parameter Extraction Technique of Microwave Small-Signal Model for Nanometer MOSFETS

Abstract

In this letter, the MOSFET small-signal equivalent circuit models under different bias conditions are analyzed for microwave applications. A novel parameter extraction technique named multi-parameter scanning (MPS) method is proposed. Under zero-bias, the MPS technique is used to extract the extrinsic parasitics and internal capacitances without using any high-frequency or low-frequency approximations. Extrinsic series resistances and substrate network are assumed to be bias-independent or at least have weak bias dependence. Therefore, after removing the extrinsic parasitics, the intrinsic elements in the saturation region can be formulated and directly extracted through linear-fitting to the measurement data. A set of nMOS test structures fabricated on the Shanghai Huali Microelectronics Corporation (HLMC) RF CMOS process are used for the investigation and validation of the proposed technique.