Abstract

During development of power Integrated Circuits (IC), several iterations between the design and test/ measurement steps are performed. Computer-aided engineering significantly shortens the product development process because the numerical simulations can identify and remediate most deficiencies during the design stage. The recent IC manufacturing technologies lead to ca. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{4}$ </tex-math></inline-formula> -order scale separation between transistor cell details and the device active area, resulting in very complex IC models. For the IC complexity to be overcome, advanced multi-scale analysis methods are required to perform accurate simulations in a decent time (order of hours). This paper proposes an advanced and enhanced multi-scale simulation method for the thermo-mechanical analysis of power ICs. The computational IC structure is automatically generated from a Cadence layout and partitioned into far-field and homogenized regions - the macro-model. Detailed localized micro-scale sub-models are assigned to limited portions of the homogenized region. The two-way simulated data transfer between the homogenized macro-model and the micro sub-models is one multi-scale approach novelty proposed in this paper. The method is validated on a real test chip structure presented in literature. The proposed multi-scale approach in conjunction with the two-way macro-micro data transfer lead to similar accuracy in the prediction of defect location, yet with significant simulation time - and computational resource reduction (CPU time and RAM usage reduced by almost 80% and 60% respectively) compared to the method used as reference.

Highlights

  • Power Integrated Circuits (IC) are used in a wide range of applications, e.g., in the automotive industry, to control different electrical loads [1]

  • Regardless of the manufacturing technology, whether it is bipolar, Double-diffused Metal-Oxide Semiconductor (DMOS) or high integration BipolarCMOS-DMOS (BCD), the power ICs metallization is subjected to Fast Thermal Cycling (FTC) [2]

  • The multi-scale Finite Element Method (FEM) is widely used in the thermo-mechanical analysis of power IC, strong limitations can occur because the simulation results are transferred only in one-way - from the macro to micro-scale sub-models [13]–[17]

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Summary

A Novel Multi-Scale Method for Thermo-Mechanical Simulation of

ADRIAN BOJITA1, MARIUS PURCAR 1 (Member, IEEE), DAN SIMON2, CIPRIAN FLOREA2, CRISTIAN BOIANCEANU2, AND VASILE TOPA1.

INTRODUCTION
BOUNDARY CONDITIONS - THERMAL LOADS
RESULT
Findings
CONCLUSION
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