Abstract
A new concept for monolithic pixel detector with 100% fill-factor is presented. The detection is based on the charge collection in the depleted zone of the reverse biased diode. Complex pixel electronics, including charge sensitive amplifier, amplitude discriminator and digital storage element is placed completely inside the diode cathode (N-well). A test chip that comprises a small pixel matrix and test structures has been fabricated in a 0.35 μ m high-voltage CMOS process and successfully tested. The results of the electrical tests and measurements with X-ray and beta radioactive sources are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
