Abstract
We present a novel contactless and nondestructive method called thesurface electron beam induced voltage (SEBIV) method for characterizingsemiconductor materials and devices. The SEBIV method is based on thedetection of the surface potential induced by electron beams of scanningelectron microscopy (SEM). The core part of the SEBIV detection set-upis a circular metal detector placed above the sample surface.The capacitance between the circular detector and whole surface of the sampleis estimated to be about 0.64 pf. It is large enough for the detectionof the induced surface potential. The irradiation mode of electron beam(e-beam) influences the signal generation. When the e-beam irradiateson the surface of semiconductors continuously, a differential signal isobtained. The real distribution of surface potentials can be obtainedwhen a pulsed e-beam with a fixed frequency is used for irradiation anda lock-in amplifier is employed for detection. The polarity of inducedpotential depends on the structure of potential barriers and surfacestates of samples. The contrast of SEBIV images in SEM changes withirradiation time and e-beam intensity.
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