A novel carbon nanotubefet based bulk built-in current sensor for single event upset detection

Abstract

The continuous scaling down of circuits has resulted in the development of carbon nanotubes (CNT) which provides a better alternative of silicon. High device packing densities is one of the advantageous factors of CNTFET compared to CMOS technology. This paper describes the new bulk current based built-in current sensor (BBICS) for the detection of single event upset (SEU) in CNTFET SRAM with less number of transistors compared to previous designs. The advantage of it is that its ability to detect low ranges of micro-current. The complete circuit, both SRAM and Sensor are built with CNTFET. This also possesses the advantage of being used in the detection of negative current pulses with the addition of an inverter circuit. This circuit operates best for two different technology nodes. This built-in current sensor is connected to the bulk terminal of the CNTFET SRAM. PVT analysis and power dissipation analysis were done for the proposed circuit.