Abstract
The booster plate in NAND flash memory cells gives numerous advantages: the reduction of program, erase and pass voltages, zero program disturbance and increased cell current. At the same time, it is simple to integrate the technology to the conventional fabrication processes. It is expected that the booster plate technology will become one of the key technologies for achieving high density memories such as 256 Mbit and 1 Gbit NAND flash.
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