Abstract
This paper introduces a pioneering application of secondary ion mass spectrometry (SIMS) for estimating the electronic properties of Pb1−x Sn x Te, a compound categorized as a topological crystalline insulator. The proposed approach marks the first application of SIMS for such estimations and focuses on investigating variations in ionization probabilities and shifts in the energy distribution of secondary ions. The ionization probabilities are influenced by pivotal parameters such as the material's work function and electron affinity. The derivation of these parameters hinges upon the energy gap's positioning relative to the vacuum level for varying values of within the Pb1−x Sn x Te compound. The findings elucidate noteworthy alterations in SIMS signals, particularly near the critical point of band-gap closing.
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