Abstract
An improved activation process using a system for the activator solution is reported. The process is applicable for autocatalytic electroless deposition of metals on rough as well as smooth/polished, n‐ and p‐type silicon substrates of all doping levels. Using the improved activation process, adhesion of more than for palladium deposits and for nickel deposits has been obtained. The etch rate of in the activator solution is low enough for it to be compatible with planar integrated‐circuit technology. The activator avoids the use of tin, which is undesirable in device fabrication.
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