Abstract
A method for determining the capacitive coupling coefficients of flash erasable programmable read only memories (EPROMs) is introduced. This technique relies on the Fowler-Nordheim erase measurements and source/drain junction leakage characteristics of the device to extract the control gate, source, and drain coupling coefficients. An advantage offered by this method is its use of an actual flash EPROM cell without requiring additional test structures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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