Abstract
A new single buffer layer YBiO 3 has been proposed for YBCO coated conductors. Highly c-axis oriented YBiO 3 buffer layer has been deposited on single crystal LaAlO 3 by a low-cost chemical solution deposition method in a temperature range as low as 730–800 °C in air. A very dense, smooth, pinhole-free morphology has been observed for YBiO 3 buffer layer. Dense, homogeneous and epitaxially grown YBCO film has been obtained with its onset critical temperature 90 K and J c (77 K, 0 T) = 3.1 MA/cm 2. The addition of Bi 2O 3, which melts at around 817 °C, has been argued to be responsible for the densification as well as low-process temperature of YBiO 3 buffer layer. These results offer an alternative to prepare desirable buffer layer(s) for YBCO coated conductors via a cost-effective and easily scalable route.
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