Abstract
A new Self-Aligned Isolation process using thin-metal Lift-off (SAIL) has been developed for NMOS VLSI circuits. In this process, a field oxide is grown first, followed by a channel-stop implant that is self-aligned to the active area. The self-alignment is achieved through a lift-off process that utilizes only thin metal. The self-alignment of channel-stop implant to active area is shown to improve the breakdown voltage of MOSFET devices. Direct window isolation is used to eliminate oxide encroachment and reduce outdiffusion of boron channel-stop implant into the active area. As a result, the narrow width effect is minimal. Since thin-metal lift-off can be performed reproducibly with high yield, this makes SAIL a viable process for VLSI fabrication.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
