Abstract
In this paper, the varying composition (x) of theHg1-xCdxTe epilayer is related to a new parameternamely the shift in the forward bias voltage at a constantcurrent (Vcon) of the photovoltaic (PV) diodes in anarray environment. The dependence of Vcon on thecomposition x is investigated both theoretically andexperimentally. It is shown that Vcon is almostlinearly proportional to x and hence can be utilized as acalibration standard for mapping x or non-uniformity in x.Here, this is done by fabricating nine 16×16photovoltaic diode arrays on liquid-phase epitaxy-grownmercury cadmium telluride, Hg1-xCdxTe, of nominalcomposition x = 0.227. The composition x or cut-offwavelengths (λc) determined from Fouriertransform infrared transmission for three specific PV diodeshaving different compositions (x) are correlated with theshift in Vcon of current-voltage (I-V)characteristics of these diodes. Following this, Vcon versus x is plotted which is used as a calibrationcurve for mapping non-uniformity in x in terms of Vcon for a given technology. Furthermore, it is proposedthat, in addition to the usual information, the I-Vcharacteristics can be used to monitor any process-inducedchanges in the composition of the starting material.
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