Abstract
Presented is a new model describing development of the avalanche process in time, taking into account the dynamics of electric field within the depleted region of the diode and the effect of parasitic capacitance shunting individual quenching micro-resistors on device parameters. Simulations show that the effective capacitance of a single pixel, which defines the multiplication factor, is the sum of the pixel capacitance and a parasitic capacitance shunting its quenching micro-resistor. Conclusions obtained as a result of modeling open possibilities of improving the pixel gain in micropixel avalanche photodiodes with high pixel density (or low pixel capacitance).
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