Abstract
This paper describes a new method for calculating the potential distribution in the depleted top layer and in the substrate of a buried-channel charge-coupled (BCCD) device. The depletion approximation is used. The experimental verification of the method is done by comparing the results with measured values for the maximum channel potential Φ MAX , the location Y m of that maximum, and the location H of the edge of the p-n depletion layer into the substrate.
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