Abstract
A new electrooptic sampling technique for characterizing ultrafast resonant-tunnelling diodes (RTD) is presented, in which the RTD is driven by the output of the photodiode irradiated by the same laser pulse that probes the output of the RTD. This method features a high time resolution, moderate slew rate and low heat load, which are the keys to characterizing RTD switching time. From the investigation of several factors, such as laser pulse width, interaction time between the probe pulse and electrical signal, and triggering jitter, the overall time resolution was found to be less than 1 ps. The measured switching times for In0.53Ga0.47As/AIAs RTDs were compared with the resistance-capacitance time constant for each device, and this confirmed that this driving method accurately measured RTD switching time at the order of 1 ps.
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