Abstract
An analytical method for computing the two-dimensional potential profile in buried-channel charge-coupled devices with zero gate separation is presented. The method invokes the superposition principle in all three major regions of the device, namely: oxide, buried n-layer, and p-type substrate. This leads to a solution for the potential distribution in these regions which satisfies all boundary conditions. One of the superposed potentials appears in the homogeneous form of Poisson's equation and it is demonstrated here that for the device structure under consideration, a simple method of solving for this potential results from the use of conformal mapping.
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