Abstract
To investigate the influence of the stress conduction mode on the voltage output of the magnetoelectric (ME) device, the structure of the traditional L-T type ME device was modified. The new L-T coupling mode has been mainly considered the two-phase interaction forces between ferroelectric and ferromagnetic materials not only have normal stress but also shear stress. As a comparison, the textured and polished silicon wafers were used as the substrates of the AlN/Fe-Ga ME devices. The AC magnetic field was applied along the length of the device, the voltage outputs of textured ME device were 10.29 mV, 9.92 mV, 20.53 mV higher than that of polished ME device at three non-resonant frequencies 513.37 Hz, 1.13 kHz, and 5.13 kHz, respectively. Compared with polished ME device under the same condition, the voltage outputs of textured ME device were enhanced significantly.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
