A new light-responsive resistive random-access memory device containing hydrogen-bonded complexes

Abstract

In the search to obtain new and more efficient components of memory devices, we report the photochromic, dielectric and electrochemical response of a light-responsive organic compound, and its memory performance under electrical fields. The so-called N(1)-[12-(4-(4′-isobutyloxyphenyldiazo)phenoxy)dodecyloxy)]thymine, tAZOi, molecule contains one azobenzene group, which provides with photochromic character, and one terminal thymine group, capable to form hydrogen bonds and assemble supramolecular dimers, (tAZOi)2. We have calculated the optical absorption coefficient, extinction coefficient and refractive index of tAZOi, which obeys the single oscillator Wemple–DiDomenico model. An ITO/tAZOi/Al device has been prepared and presents two switchable conductance states with preservation of memory performance. The mechanism linked to the resistive random-access memory (RRAM) has been evaluated by molecular modelling and is controlled by p-type conduction, possibly involving hydrogen-bonding. Upon UV irradiation at ∼ 365 nm, tAZOi displays an increase in the complex permittivity driven by trans-to-cis (E-to-Z) isomerisation of the azobenzene groups. Molecular simulations suggest that conductivity and device performance can be enhanced (and controlled) by light exposure through the formation of activated Z isomers that could transfer charge to other neighbouring molecules, resulting in photo-electric responsive devices.