Abstract
We propose a new laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) with a tunneling junction at the drain side to reduce its on-state resistance and improve the peak transconductance significantly, as compared with the conventional LDMOSFET device. Using 2-D numerical simulations in an ATLAS device simulator, we have shown that the proposed tunneling junction at the drain side results in 25% reduction in RON and 20% improvement in peak transconductance in an ~ 40-V device without any significant degradation in other performance parameters.
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