Abstract
During the industrial application of the new phase change memory material carbon-doped Ge2Sb2Te5 (GSTC), it is necessary to perform planarization for the confined memory cell structure through the chemical mechanical polishing (CMP) process. The goal of CMP is to acquire a high material removal rate and selectivity while ensuring that the polished surface is free of scratches and corrosion pits. A new acidic slurry added with potassium persulfate (OXONE) as an oxidizer was developed. The acidic slurry added with 5000 ppm OXONE has a amorphous GSTC film material removal rate of 5200 Å min−1, a high selectivity between GSTC and Si3N4 films of 950:1, and no corrosion-induced pit. In order to clarify the mechanism of GSTC CMP with OXONE, the Energy Dispersive Spectrometer, potentiodynamic polarization curve and X-ray photoelectron spectroscope were adopted to analyze the surface of GSTC. It is found that the chemical reaction mechanism is significantly different from that of hydrogen peroxide (H2O2). Finally, the mechanism of GSTC during the CMP with OXONE in the acidic slurry is depicted.
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