Abstract
We report successful growth of high-quality thin films with clean and completely precipitate-free surface, suitable for device applications, by applying a new concept and method to the substrates. The concept consists in generation of artificial steps of controlled height and width, and desired shape on the surface of the substrate. The width of the step is chosen so that it is equal to the double of the migration (surface diffusion) length of the atomic species in the growth process of the film. If precipitates occur, they will be selectively gathered to the step edge where the free energy is lowest. Using this new method, we have successfully obtained by MOCVD high-quality precipitate-free Bi-2223 and Bi-2223/Bi-2212-superlattice thin films on (100) SrTiO3 substrates with artificial steps of controlled width and height. These as-grown films have been further used to fabricate patterned intrinsic Josephson junctions. Completely precipitate-free films offer a strong advantage for integration, and generate new possibilities for the device fabrication.
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