Abstract
In this work, we present the results of development of element base for advanced cryogenic silicon diode temperature sensors (DTSs). In these sensors, influence of the switching effects on sensor characteristics is absent, that allows solving the problem of rise in temperature monitoring efficiency with the required high accuracy in low-temperature region. The developed DTSs will allow ones to meet elevated requirements to technical sensor characteristics from modern precise technologies, space-rocket technique, low-temperature electronics, cryogenic technique, low-temperature physics and engineering. Achieved possibilities to control the sensor's response curve by the excitation current value will allow to extend DTSs application areas both for precise measurements with minimization of dissipatedpower in the sensitive element and for different areas of science and technology with taking into account the requirements to signal-noise ratio.
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