Abstract
dry etch and Electron beam lithography were used to directly integrate plasmonic color filters onto the top surface of a complementary metal oxide semiconductor (CMOS. The filters have a spectral range of 3.5 × 8 microns. After measuring the photocurrent, it was found that the 150×150-pixel plasmonic CIS was sensitive to all colors in the visible spectrum. The filters were made using a straightforward method that only required a single lithographic procedure. This is in contrast to the standard multi-stage processing required when working with dyedoped polymers. It is possible to fabricate these plasmonic components on a metal layer near to the photodiodes since they are intrinsically compatible with a typical CMOS process. Future low-cost, low-cross-talk, high-functionality advanced CIS may be possible with the help of such plasmonic components.
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