Abstract
A new field isolation technology for LSI devices is described. This technology features low-temperature ( 2 and photoresist lift-off. MOS devices are fabricated using this isolation technology. It is shown that bird's-beak-free field oxide is formed using a fabrication process which is shorter than that using other isolation methods. It is shown that the narrow-channel effect is significantly reduced in MOSFET's fabricated with this technology.
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